GT30J126 2008-07-29 1 toshiba insulated gate bipolar tr ansistor silicon n channel igbt GT30J126 high power switching applications fast switching applications ? fourth-generation igbt ? enhancement mode type ? fast switching (fs): high speed: t f = 0.05 s (typ.) low switching loss : e on = 1.00 mj (typ.) : e off = 0.80 mj (typ.) ? low saturation voltage: v ce (sat) = 1.95 v (typ.) absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges 20 v dc i c 30 collector current 1 ms i cp 60 a collector power dissipation (tc = 25c) p c 90 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance r th (j-c) 1.39 c/w marking unit: mm jedec D jeita D toshiba 2-16f1a weight: 5.8 g (typ.) GT30J126 toshiba lot no. a line indicates lead (pb)-free part no. (or abbreviation code)
GT30J126 2008-07-29 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 20 v, v ce = 0 D D 500 na collector cut-off current i ces v ce = 600 v, v ge = 0 D D 1.0 ma gate-emitter cut-off voltage v ge (off) i c = 3 ma, v ce = 5 v 3.5 D 6.5 v collector-emitter saturation voltage v ce (sat) i c = 30 a, v ge = 15 v D 1.95 2.45 v input capacitance c ies v ce = 10 v, v ge = 0, f = 1 mhz D 4650 D pf turn-on delay time t d (on) D 0.09 D rise time t r D 0.07 D turn-on time t on D 0.24 D turn-off delay time t d (off) D 0.30 D fall time t f D 0.05 D switching time turn-off time t off D 0.43 D s turn-on switching loss e on D 1.00 D switching loss turn-off switching loss e off inductive load v cc = 300 v, i c = 30 a v gg = +15 v, r g = 24 ? (note 1) (note 2) D 0.80 D mj note 1: switching time measurement circuit and input/output waveforms note 2: switching loss measurement waveforms 10% 90% v ge v ce i c e off e on 0 0 5% 10% 90% v ge v ce i c t d (off) t of f t d ( on ) t r t on 0 0 t f 10% 10% 10% 90% 10% 90% gt30j324 r g i c v ce l v cc ? v ge
GT30J126 2008-07-29 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) i c ? v ge collector current i c (a) case temperature tc (c) v ce (sat) ? tc collector-emitter saturation voltage v ce (sat) (v) 60 50 40 30 20 10 0 0 1 2 3 4 5 common emitter tc = 25 c 15 20 10 9 v ge = 8 v 0 4 8 12 16 20 common emitter tc = ? 40c 30 i c = 10 a 60 0 4 8 12 16 20 0 4 8 12 16 20 common emitter tc = 25 c 0 4 8 12 16 20 30 i c = 10 a 60 20 0 4 8 12 16 20 common emitter tc = 125c 0 4 8 12 16 30 i c = 10 a 60 60 50 40 30 20 10 0 0 4 8 12 16 20 common emitter v ce = 5 v ? 40 tc = 125c 25 0 1 2 3 4 common emitter v ge = 15 v ? 60 ? 20 20 60 100 140 i c = 10 a 30 60
GT30J126 2008-07-29 4 collector current i c (a) switching time t off , t f , t d (off) ( s) switching time t on , t r , t d (on) ? r g switching time t on , t r , t d (on) ( s) switching time t on , t r , t d (on) ? i c switching time t on , t r , t d (on) ( s) switching time t off , t f , t d (off) ? r g switching time t off , t f , t d (off) ( s) collector current i c (a) switching time t off , t f , t d (off) ? i c switching loss e on , e off ? r g collector current i c (a) switching loss e on , e off ? i c switching loss e on , e off (mj) gate resistance r g ( ? ) gate resistance r g ( ? ) gate resistance r g ( ? ) switching loss e on , e off (mj) common emitter v cc = 300 v v gg = 15 v i c = 30 a : tc = 25c : tc = 125c (note 2) 1 10 30 100 300 1000 3 e off 10 3 1 0.1 0.3 30 e on 1 0.3 0.01 0.03 3 0.1 0 5 10 15 20 25 30 common emitter v cc = 300 v v gg = 15 v r g = 24 ? : tc = 25c : tc = 125c (note 1) t d (on) t r t on 0.01 0 5 10 15 20 25 30 1 0.3 0.03 10 0.1 3 common emitter v cc = 300 v v gg = 15 v r g = 24 ? : tc = 25c : tc = 125c (note 1) t off t d (off) t f 0.01 0 5 10 15 20 25 30 1 0.3 0.03 3 0.1 common emitter v cc = 300 v v gg = 15 v r g = 24 ? : tc = 25c : tc = 125c (note 2) e off e on 1 10 30 100 300 1000 3 3 1 0.1 0.3 10 0.01 0.03 t off t f common emitter v cc = 300 v v gg = 15 v i c = 30 a : tc = 25c : tc = 125c (note 1) t d (off) 3 common emitter v cc = 300 v v gg = 15 v i c = 30 a : tc = 25c : tc = 125c (note 1) 1 0.3 0.1 0.01 1 10 30 100 300 1000 3 0.03 t on t d (on) t r 10
GT30J126 2008-07-29 5 transient thermal resistance r th (t) (c/w) collector current i c (a) collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) gate-emitter voltage v ge (v) gate charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) safe operating area collector current i c (a) collector-emitter voltage v ce (v) reverse bias soa pulse width t w (s) r th (t) ? t w 0 40 80 120 160 200 0 100 200 300 400 500 0 4 8 12 16 20 v ce = 100 v common emitter r l = 10 ? tc = 25 c 300 200 t j 125c v ge = 15 v r g = 24 ? 0.1 1 100 1 10 30 3 0.3 3 10 30 300 100 1000 10 ? 5 10 ? 4 10 ? 2 10 ? 1 10 2 10 ? 4 10 ? 3 10 ? 2 10 ? 1 10 1 10 2 10 0 10 ? 3 10 0 10 1 tc = 25 c 0.1 common emitter v ge = 0 f = 1 mhz tc = 25 c 10000 10 100 300 1000 30 3000 10 100 1000 30 0.3 1 3 c ies c oes c res 300 *: single pulse tc = 25c curves must be derated linearly with increase in temperature. 100 s* 50 s* 1 ms* 10 ms* dc operation i c max (continuous) i c max (pulsed)* 1 10 30 3 0.3 3 10 30 300 100 0.1 1 100 1000
GT30J126 2008-07-29 6 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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